XNRUSEMI XRS150N10T

XNRUSEMI · FETs & Power MOSFETs · MPN XRS150N10T

No reviews yet — be the first to review XNRUSEMI XRS150N10T.

Specifications

Output Capacitance(Coss)900pF
Pd - Power Dissipation312W
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)84nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)19.1pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.797nF

Technical details

312W 100V 3V 3.3mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs