XNRUSEMI XRS150N10G

XNRUSEMI · FETs & Power MOSFETs · MPN XRS150N10G

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)84nC@50V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation312W
RDS(on)3.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)19.1pF
Number1 N-channel
Input Capacitance(Ciss)4.797nF

Technical details

N-Channel 100V 150A 312W Surface Mount TO-263

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