XNRUSEMI XRS12N10S

XNRUSEMI · FETs & Power MOSFETs · MPN XRS12N10S

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)22.7nC@10V
Current - Continuous Drain(Id)12A
Output Capacitance(Coss)144pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)11.3pF
RDS(on)15.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.208nF

Technical details

100V 12A 1.8V 60W 15.6mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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