XNRUSEMI XRS120P10H

XNRUSEMI · FETs & Power MOSFETs · MPN XRS120P10H

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Specifications

Gate Charge(Qg)136nC@50V
Drain to Source Voltage100V
Output Capacitance(Coss)798pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)111.2pF
RDS(on)11mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)9.349nF
TypeP-Channel

Technical details

100V 120A 3V 300W 11mΩ@10V 1 P-Channel P-Channel TO-247 Single FETs, MOSFETs RoHS

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