XNRUSEMI XRS120N10G

XNRUSEMI · FETs & Power MOSFETs · MPN XRS120N10G

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Specifications

Gate Charge(Qg)44nC@4.5V
Drain to Source Voltage100V
Output Capacitance(Coss)592pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation178W
Reverse Transfer Capacitance (Crss@Vds)19.8pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.102nF
TypeN-Channel

Technical details

N-Channel 100V 120A 178W Surface Mount TO-263

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