XNRUSEMI XRS110P06T

XNRUSEMI · FETs & Power MOSFETs · MPN XRS110P06T

No reviews yet — be the first to review XNRUSEMI XRS110P06T.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)80.2nC@30V
Current - Continuous Drain(Id)110A
Output Capacitance(Coss)941pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)5.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.403nF
TypeP-Channel

Technical details

P-Channel 60V 110A 180W Through Hole TO-220AB

Related FETs & Power MOSFETs