XNRUSEMI · FETs & Power MOSFETs · MPN XRS110P06G
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 80.2nC@30V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF |
| RDS(on) | 5.4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.403nF |
60V 110A 2V 180W 5.4mΩ@10V 1 P-Channel TO-263 Single FETs, MOSFETs RoHS