XNRUSEMI XRS10P06S

XNRUSEMI · FETs & Power MOSFETs · MPN XRS10P06S

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)11.6nC@30V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)5.2pF
RDS(on)42mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)667pF

Technical details

P-Channel 60V 10A 40W Surface Mount SOP-8

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