XNRUSEMI XRS10N10Q

XNRUSEMI · FETs & Power MOSFETs · MPN XRS10N10Q

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)3.7nC@50V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation46W
Reverse Transfer Capacitance (Crss@Vds)1.9pF
RDS(on)65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)228pF

Technical details

100V 10A 1.8V 46W 65mΩ@10V 1 N-channel SOT-89-3L Single FETs, MOSFETs RoHS

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