XNRUSEMI XRS100N06LD

XNRUSEMI · FETs & Power MOSFETs · MPN XRS100N06LD

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Specifications

Gate Charge(Qg)35nC@30V
Drain to Source Voltage60V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation73.5W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.18nF

Technical details

N-Channel 60V 100A 73.5W Surface Mount PDFN-8L(3.3x3.3)

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