XNRUSEMI XRS1008L

XNRUSEMI · FETs & Power MOSFETs · MPN XRS1008L

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Specifications

Gate Charge(Qg)3.7nC@50V
Drain to Source Voltage100V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)58pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation8W
Reverse Transfer Capacitance (Crss@Vds)1.9pF
RDS(on)63mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)228pF
TypeN-Channel

Technical details

100V 8A 1.8V 8W 63mΩ@10V 1 N-channel N-Channel SOT-23-3L Single FETs, MOSFETs RoHS

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