XNRUSEMI XRC65R180

XNRUSEMI · FETs & Power MOSFETs · MPN XRC65R180

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Specifications

Gate Charge(Qg)15.3nC
Drain to Source Voltage650V
Output Capacitance(Coss)33pF
Current - Continuous Drain(Id)19.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation76W
Reverse Transfer Capacitance (Crss@Vds)4.3pF
RDS(on)180mΩ
Number1 N-channel
Input Capacitance(Ciss)418pF
TypeN-Channel

Technical details

650V 19.5A 3.9V 76W 180mΩ 1 N-channel N-Channel TO-252-3L Single FETs, MOSFETs RoHS

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