XNRUSEMI XR9N20

XNRUSEMI · FETs & Power MOSFETs · MPN XR9N20

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Specifications

Gate Charge(Qg)22.8nC@100V
Drain to Source Voltage200V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)225mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)922pF

Technical details

N-Channel 200V 9A 30W Surface Mount TO-252-3L

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