XNRUSEMI XR8P10

XNRUSEMI · FETs & Power MOSFETs · MPN XR8P10

No reviews yet — be the first to review XNRUSEMI XR8P10.

Specifications

Gate Charge(Qg)19.6nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)33.8pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)28.2pF
RDS(on)280mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.199nF
TypeP-Channel

Technical details

P-Channel 100V 8A 40W Surface Mount TO-252-3L

Related FETs & Power MOSFETs