XNRUSEMI XR8G02S

XNRUSEMI · FETs & Power MOSFETs · MPN XR8G02S

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)15nC@4.5V;33.7nC@4.5V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)132pF;191pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV;700mV
Pd - Power Dissipation2W;1.5W
RDS(on)12mΩ@4.5V;16mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)114pF;168pF
Input Capacitance(Ciss)700pF;1.2nF
TypeN-Channel + P-Channel

Technical details

20V 8A N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS

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