XNRUSEMI XR8G02M

XNRUSEMI · FETs & Power MOSFETs · MPN XR8G02M

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)15nC@10V;19nC@10V
Output Capacitance(Coss)110pF;180pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation15W;20W
RDS(on)12mΩ@4.5V;17mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)82pF;125pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)740pF;1.04nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 20V 8A 20W Surface Mount DFN-8L(2x2)

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