XNRUSEMI XR8G02L

XNRUSEMI · FETs & Power MOSFETs · MPN XR8G02L

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)15nC@10V;19nC@10V
Output Capacitance(Coss)132pF;302pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV;700mV
Pd - Power Dissipation2W;1.9W
Reverse Transfer Capacitance (Crss@Vds)114pF;279pF
RDS(on)14mΩ@4.5V;20mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)700pF;1.3nF
TypeN-Channel + P-Channel

Technical details

20V 8A 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOT-23-6L Single FETs, MOSFETs RoHS

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