XNRUSEMI XR8810B

XNRUSEMI · FETs & Power MOSFETs · MPN XR8810B

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)8nC@4.5V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)103pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation830mW
RDS(on)13.5mΩ@4.5V;21mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)90pF
Number2 N-Channel
Input Capacitance(Ciss)545pF
TypeN-Channel

Technical details

20V 7A 700mV 830mW 2 N-Channel N-Channel TSSOP-8 Single FETs, MOSFETs RoHS

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