XNRUSEMI XR80P04

XNRUSEMI · FETs & Power MOSFETs · MPN XR80P04

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Specifications

Gate Charge(Qg)110nC@20V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation81.16W
Reverse Transfer Capacitance (Crss@Vds)385pF
RDS(on)6.4mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.295nF

Technical details

P-Channel 40V 80A 81.16W Surface Mount TO-252-3L

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