XNRUSEMI XR80P02

XNRUSEMI · FETs & Power MOSFETs · MPN XR80P02

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation43.1W
Reverse Transfer Capacitance (Crss@Vds)570pF
RDS(on)3.8mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.77nF

Technical details

P-Channel 20V 80A 43.1W Surface Mount TO-252-3L

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