XNRUSEMI XR80N06

XNRUSEMI · FETs & Power MOSFETs · MPN XR80N06

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)90nC@30V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation108W
RDS(on)5.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)257pF
Number1 N-channel
Input Capacitance(Ciss)4.136nF

Technical details

N-Channel 60V 80A 108W Surface Mount TO-252-3L

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