XNRUSEMI XR80N04B

XNRUSEMI · FETs & Power MOSFETs · MPN XR80N04B

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Specifications

Gate Charge(Qg)48nC@20V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation114W
RDS(on)5.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)138pF
Number1 N-channel
Input Capacitance(Ciss)2.443nF

Technical details

N-Channel 40V 80A 114W Surface Mount TO-252-3L

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