XNRUSEMI XR80N02D

XNRUSEMI · FETs & Power MOSFETs · MPN XR80N02D

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)32nC@4.5V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)407pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)386pF
RDS(on)4.2mΩ@25V
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

20V 80A 700mV 58W 4.2mΩ@25V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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