XNRUSEMI XR75N10H

XNRUSEMI · FETs & Power MOSFETs · MPN XR75N10H

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Specifications

Gate Charge(Qg)128nC@50V
Drain to Source Voltage100V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation125W
RDS(on)9.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)252pF
Number1 N-channel
Input Capacitance(Ciss)7.355nF

Technical details

N-Channel 100V 75A 125W Surface Mount TO-252-3L

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