XNRUSEMI XR6G04L

XNRUSEMI · FETs & Power MOSFETs · MPN XR6G04L

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Specifications

ConfigurationHalf-Bridge
Gate Charge(Qg)11nC@20V;11.8nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)5A;5.5A
Output Capacitance(Coss)58pF;50pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W;2.1W
RDS(on)26mΩ@10V;60mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)35pF;42pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)435pF;553pF

Technical details

N-Channel+P-Channel 40V 5A 2.5W Surface Mount SOT-23-6L

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