XNRUSEMI XR6G02L

XNRUSEMI · FETs & Power MOSFETs · MPN XR6G02L

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)4.6nC@15V;8.8nC@10V
Current - Continuous Drain(Id)6.3A;4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)35pF;85pF
RDS(on)17mΩ@4.5V;30mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)310pF;830pF

Technical details

20V 700mV 1W 1 N-Channel + 1 P-Channel SOT-23-6L Single FETs, MOSFETs RoHS

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