XNRUSEMI XR65R500FT

XNRUSEMI · FETs & Power MOSFETs · MPN XR65R500FT

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Specifications

Gate Charge(Qg)15.6nC@480V
Drain to Source Voltage650V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation73W
Reverse Transfer Capacitance (Crss@Vds)470fF
RDS(on)430mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)470pF
TypeN-Channel

Technical details

650V 8A 3.5V 73W 430mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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