XNRUSEMI XR65R45H

XNRUSEMI · FETs & Power MOSFETs · MPN XR65R45H

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Specifications

Gate Charge(Qg)128nC@480V
Drain to Source Voltage650V
Output Capacitance(Coss)217pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation388W
RDS(on)45mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)2.5pF
Number1 N-channel
Input Capacitance(Ciss)3.395nF
TypeN-Channel

Technical details

650V 50A 4V 388W 45mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS

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