XNRUSEMI XR65R36H

XNRUSEMI · FETs & Power MOSFETs · MPN XR65R36H

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Specifications

Configuration-
Gate Charge(Qg)127nC@32V
Drain to Source Voltage650V
Output Capacitance(Coss)1.51nF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.55V
Pd - Power Dissipation220W
RDS(on)36mΩ
Reverse Transfer Capacitance (Crss@Vds)130pF
Number1 N-channel
Input Capacitance(Ciss)8.3nF

Technical details

650V 85A 1.55V 220W 36mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS

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