XNRUSEMI XR65R250Tg2

XNRUSEMI · FETs & Power MOSFETs · MPN XR65R250Tg2

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)23.5nC@180V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation21W
RDS(on)249mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.4pF
Number1 N-channel
Input Capacitance(Ciss)750pF

Technical details

N-Channel 650V 13A 21W Through Hole TO-220AB

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