XNRUSEMI XR65R250G2

XNRUSEMI · FETs & Power MOSFETs · MPN XR65R250G2

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Specifications

Gate Charge(Qg)23.5nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation21W
Reverse Transfer Capacitance (Crss@Vds)1.4pF
RDS(on)300mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)750pF

Technical details

650V 13A 21W Surface Mount TO-252-3L

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