XNRUSEMI XR65R180T

XNRUSEMI · FETs & Power MOSFETs · MPN XR65R180T

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Specifications

Gate Charge(Qg)41nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation245W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)200mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.459nF

Technical details

650V 21A 245W Through Hole TO-220AB

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