XNRUSEMI XR65R110T

XNRUSEMI · FETs & Power MOSFETs · MPN XR65R110T

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)1.5pF
Number1 N-channel
Input Capacitance(Ciss)1.595nF

Technical details

650V 24A 89W Through Hole TO-220AB

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