XNRUSEMI XR65P02D

XNRUSEMI · FETs & Power MOSFETs · MPN XR65P02D

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)885.6pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation41.6W
Reverse Transfer Capacitance (Crss@Vds)976pF
RDS(on)4.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)6.199nF

Technical details

P-Channel 20V 65A 41.6W Surface Mount PDFN-8L(3.3x3.3)

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