XNRUSEMI XR65N06

XNRUSEMI · FETs & Power MOSFETs · MPN XR65N06

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Specifications

Gate Charge(Qg)56nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)252pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)205pF
RDS(on)8.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.873nF
TypeN-Channel

Technical details

N-Channel 60V 65A 75W Surface Mount TO-252-3L

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