XNRUSEMI XR60P03D

XNRUSEMI · FETs & Power MOSFETs · MPN XR60P03D

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)325pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)283pF
RDS(on)14mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.396nF
TypeP-Channel

Technical details

30V 55A 2.5V 37W 14mΩ@10V 1 P-Channel P-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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