XNRUSEMI XR60N10H

XNRUSEMI · FETs & Power MOSFETs · MPN XR60N10H

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Specifications

Gate Charge(Qg)87nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)279pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation154W
Reverse Transfer Capacitance (Crss@Vds)196pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.249nF
TypeN-Channel

Technical details

N-Channel 100V 60A 154W Surface Mount TO-252-3L

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