XNRUSEMI XR60N06

XNRUSEMI · FETs & Power MOSFETs · MPN XR60N06

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)56nC@10V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)252pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)205pF
RDS(on)6.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.873nF
TypeN-Channel

Technical details

60V 60A 3V 70W 6.2mΩ@10V 1 N-channel N-Channel TO252-3L Single FETs, MOSFETs RoHS

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