XNRUSEMI XR5N10Q

XNRUSEMI · FETs & Power MOSFETs · MPN XR5N10Q

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Specifications

Gate Charge(Qg)26.2nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)5A
Output Capacitance(Coss)40pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation16.4W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)150mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.023nF
TypeN-Channel

Technical details

N-Channel 100V 5A 16.4W Surface Mount SOT-89-3L

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