XNRUSEMI XR50N10L2

XNRUSEMI · FETs & Power MOSFETs · MPN XR50N10L2

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Specifications

Gate Charge(Qg)101nC@50V
Drain to Source Voltage100V
Output Capacitance(Coss)175pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation62.5W
RDS(on)17mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)155pF
Number1 N-channel
Input Capacitance(Ciss)5.06nF
TypeN-Channel

Technical details

100V 50A 1.7V 62.5W 17mΩ@10V 1 N-channel N-Channel TO-252-3L Single FETs, MOSFETs RoHS

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