XNRUSEMI XR50N10H

XNRUSEMI · FETs & Power MOSFETs · MPN XR50N10H

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Specifications

Gate Charge(Qg)87nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)59A
Output Capacitance(Coss)232pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation153W
RDS(on)20mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)163pF
Number1 N-channel
Input Capacitance(Ciss)5.211nF
TypeN-Channel

Technical details

N-Channel 100V 59A 153W Surface Mount TO-252-3L

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