XNRUSEMI XR50N06F

XNRUSEMI · FETs & Power MOSFETs · MPN XR50N06F

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)50nC@30V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation87.7W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)120pF
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

60V 50A 1.4V 87.7W 11mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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