XNRUSEMI XR50N06

XNRUSEMI · FETs & Power MOSFETs · MPN XR50N06

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)140pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation87.7W
RDS(on)17mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)120pF
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

N-Channel 60V 50A 87.7W Surface Mount TO252-3L

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