XNRUSEMI XR50G30F

XNRUSEMI · FETs & Power MOSFETs · MPN XR50G30F

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Specifications

Gate Charge(Qg)12.8nC@4.5V;22nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)163pF;233pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation15W;21.3W
Reverse Transfer Capacitance (Crss@Vds)131pF;206pF
RDS(on)7.5mΩ@10V;8.7mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.2nF;1.77nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 45A 15W 21.3W Surface Mount PDFN5060-8L

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