XNRUSEMI XR4N50FR

XNRUSEMI · FETs & Power MOSFETs · MPN XR4N50FR

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Specifications

Gate Charge(Qg)4.8nC@480V
Drain to Source Voltage500V
Current - Continuous Drain(Id)4A
Output Capacitance(Coss)28pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
RDS(on)2.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)218pF
TypeN-Channel

Technical details

N-Channel 500V 4A 100W Surface Mount TO-252-3L

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