XNRUSEMI · FETs & Power MOSFETs · MPN XR4N10S
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| Gate Charge(Qg) | 13.8nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 18pF |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 185mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 436pF |
| Type | N-Channel |
100V 4A 1.6V 1.6W 185mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS