XNRUSEMI · FETs & Power MOSFETs · MPN XR4N10L
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 14.8nC@50V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 26.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 120mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 655pF |
N-Channel 100V 4A 26.6W Surface Mount SOT-23-3L