XNRUSEMI XR4G15F

XNRUSEMI · FETs & Power MOSFETs · MPN XR4G15F

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Specifications

Gate Charge(Qg)15.2nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)988pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation40.3W
RDS(on)780mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)35pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)706pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 150V 6A 40.3W Surface Mount PDFN5060-8L

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