XNRUSEMI · FETs & Power MOSFETs · MPN XR40P10T
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| Gate Charge(Qg) | 102nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 111W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 22mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.612nF |
P-Channel 100V 40A 111W Through Hole TO-220AB