XNRUSEMI XR40G10D

XNRUSEMI · FETs & Power MOSFETs · MPN XR40G10D

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)13nC@10V
Current - Continuous Drain(Id)10A
Output Capacitance(Coss)87pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)22mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)860pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 40V 10A 3.2W Surface Mount PDFN3333-8L

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